FAIRCHILD SEMICONDUCTOR FDD8780 晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V
The is a N-channel MOSFET produced using Semiconductor"s proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
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- Avalanche rated and 100% tested
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- Low gate resistance
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- 21nC Typical low gate charge
额定电压DC 25.0 V
额定电流 35.0 A
针脚数 3
漏源极电阻 0.0065 Ω
极性 N-Channel
耗散功率 50 W
阈值电压 1.8 V
输入电容 1.44 nF
栅电荷 29.0 nC
漏源极电压Vds 25 V
漏源击穿电压 25.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 35.0 A
上升时间 9 ns
输入电容Ciss 1440pF @13VVds
额定功率Max 50 W
下降时间 24 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 50 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD8780 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
NTD4909NT4G 安森美 | 功能相似 | FDD8780和NTD4909NT4G的区别 |
STD60N3LH5 意法半导体 | 功能相似 | FDD8780和STD60N3LH5的区别 |