FAIRCHILD SEMICONDUCTOR FDS6630A 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 38 mohm, 10 V, 1.7 V
The is a single N-channel Logic Level MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- 5nC Typical low gate charge
额定电压DC 30.0 V
额定电流 6.50 A
通道数 1
针脚数 8
漏源极电阻 38 mΩ
极性 N-Channel
耗散功率 2.5 W
阈值电压 1.7 V
输入电容 460 pF
栅电荷 5.00 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.50 A
上升时间 8 ns
输入电容Ciss 460pF @15VVds
额定功率Max 1 W
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6630A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
NDS9410A 飞兆/仙童 | 类似代替 | FDS6630A和NDS9410A的区别 |
FDS9412 飞兆/仙童 | 类似代替 | FDS6630A和FDS9412的区别 |
SI9410DY 飞兆/仙童 | 类似代替 | FDS6630A和SI9410DY的区别 |