FAIRCHILD SEMICONDUCTOR FDMA507PZ. 场效应管, MOSFET, P沟道, -20V, 0.019Ω, -7.8A, MICROFET-6
The is a single P-channel MOSFET produced Semiconductor"s PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultra-portable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- .
- Halogen-free
- .
- >3.2kV Typical HBM ESD protection level
针脚数 6
漏源极电阻 0.019 Ω
极性 P-Channel
耗散功率 2.4 W
漏源极电压Vds 20 V
连续漏极电流Ids 7.8A
上升时间 14 ns
输入电容Ciss 2015pF @10VVds
额定功率Max 900 mW
下降时间 96 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.4W Ta
安装方式 Surface Mount
引脚数 6
封装 WDFN-6
封装 WDFN-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15