FAIRCHILD SEMICONDUCTOR FDFMA3N109 晶体管, MOSFET, N沟道, 2.9 A, 30 V, 0.075 ohm, 1 V, 1 V
* MOSFET 2.9 A, 30 V * R DSON = 123 m Ω @ V GS = 4.5 V * R DSON = 140 m Ω @ V GS = 3.0 V * R DSON = 163 m Ω @ V GS = 2.5 V * Schottky * VF * Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm * RoHS Compliant
e络盟:
FAIRCHILD SEMICONDUCTOR FDFMA3N109 晶体管, MOSFET, N沟道, 2.9 A, 30 V, 0.075 ohm, 1 V, 1 V
艾睿:
Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET EP T/R
安富利:
Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R
富昌:
N-Channel 30 V 123 mOhm Integrated PowerTrench® Mosfet - MicroFET 2x2
Verical:
Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET EP T/R
Newark:
# FAIRCHILD SEMICONDUCTOR FDFMA3N109 MOSFET Transistor, N Channel + Schottky, 2.9 A, 30 V, 0.075 ohm, 4.5 V, 1 V
Win Source:
MOSFET N-CH 30V 2.9A MICRO2X2
DeviceMart:
MOSFET N-CH 30V 2.9A MICRO2X2
额定电压DC 30.0 V
额定电流 2.90 A
针脚数 8
漏源极电阻 0.075 Ω
极性 N-Channel
耗散功率 1.5 W
阈值电压 1 V
输入电容 200 pF
栅电荷 3.00 nC
漏源极电压Vds 30 V
连续漏极电流Ids 2.90 A
上升时间 8 ns
输入电容Ciss 220pF @15VVds
额定功率Max 650 mW
下降时间 2 ns
工作温度Max 150 ℃
耗散功率Max 1.5W Ta
安装方式 Surface Mount
引脚数 8
封装 WDFN-6
封装 WDFN-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99