FAIRCHILD SEMICONDUCTOR FDC5612 晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
The is a N-channel MOSFET produced using Semiconductor"s proprietary PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
- .
- High performance Trench technology for extremely low RDS ON
- .
- 12.5nC Typical low gate charge
额定电压DC 60.0 V
额定电流 4.30 A
针脚数 6
漏源极电阻 55 mΩ
极性 N-Channel
耗散功率 1.6 W
阈值电压 2.2 V
输入电容 650 pF
栅电荷 12.5 nC
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 4.30 A
上升时间 8 ns
输入电容Ciss 650pF @25VVds
额定功率Max 800 mW
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC5612 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC5612_F095 飞兆/仙童 | 类似代替 | FDC5612和FDC5612_F095的区别 |
FDC5612_NL 飞兆/仙童 | 功能相似 | FDC5612和FDC5612_NL的区别 |