FDC604P

FAIRCHILD SEMICONDUCTOR  FDC604P  晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -8V 最大漏极电流IdDrain Current| -5.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 60mΩ@ VGS = -1.8V, ID = -4A 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4~-1.5V 耗散功率PdPower Dissipation| 1.6W Description & Applications| P-Channel 1.8V Specified Power Trench MOSFET General Description This P-Channel 1.8V specified MOSFET uses ’s low voltage Power Trench process. It has been optimized for battery power management applications. Applications • DC-DC converters • Load switch • Power management Features • Fast switching speed • High performance trench technology for extremely low RDSON 描述与应用| P沟道1.8V额定功率沟道MOSFET 概述 此P沟道MOSFET的1.8V指定使用飞兆半导体的低电压功率沟槽过程。它已被优化的电池电源管理应用。 应用 •DC-DC转换器 •负荷开关 •电源管理 特点 •开关速度快 •高性能沟道技术极低的RDS（ON）