FAIRCHILD SEMICONDUCTOR FDS6670A 晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
The is a single N-channel Logic Level MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC 30.0 V
额定电流 13.0 A
通道数 1
针脚数 8
漏源极电阻 8 mΩ
极性 N-Channel
耗散功率 2.5 W
阈值电压 1.8 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 13.0 A
上升时间 15 ns
输入电容Ciss 2220pF @15VVds
额定功率Max 1 W
下降时间 42 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6670A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS7760A 飞兆/仙童 | 类似代替 | FDS6670A和FDS7760A的区别 |
SI4162DY-T1-GE3 威世 | 功能相似 | FDS6670A和SI4162DY-T1-GE3的区别 |