FAIRCHILD SEMICONDUCTOR FDG8842CZ 双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
The is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
针脚数 6
漏源极电阻 0.25 Ω
极性 N-Channel, P-Channel
耗散功率 360 mW
阈值电压 1 V
漏源极电压Vds 30V, 25V
连续漏极电流Ids 750 mA
输入电容Ciss 120pF @10VVds
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDG8842CZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
SI1539CDL-T1-GE3 威世 | 功能相似 | FDG8842CZ和SI1539CDL-T1-GE3的区别 |
SI1539DL-T1-E3 Vishay Siliconix | 功能相似 | FDG8842CZ和SI1539DL-T1-E3的区别 |