FDS6675BZ

FAIRCHILD SEMICONDUCTOR  FDS6675BZ  晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V

The is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM figure of merit QGxRDSON of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.

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Extended VGSS range -25V for battery applications

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HBM ESD protection level of ±5.4kV typical

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High performance trench technology for extremely low RDS on

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High power and current handling capability

ESD sensitive device, take proper precaution while handling the device.