FAIRCHILD SEMICONDUCTOR FDS8960C 双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
The is a dual N/P-channel enhancement-mode MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
额定电流 7.00 A
通道数 2
针脚数 8
漏源极电阻 24 mΩ
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 2 V
输入电容 540 pF
栅电荷 5.70 nC
漏源极电压Vds 35 V
漏源击穿电压 35 V
连续漏极电流Ids 7.00 A
上升时间 16.0 ns
输入电容Ciss 570pF @15VVds
额定功率Max 900 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS8960C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS4897C 飞兆/仙童 | 类似代替 | FDS8960C和FDS4897C的区别 |