FAIRCHILD SEMICONDUCTOR FDG6317NZ 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
The is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS ON and gate charge QG in a small package.
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- Low gate charge
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- Gate-source Zener for ESD ruggedness 1.6kV human body model
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- High performance Trench technology for extremely low RDS ON
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- Compact industry standard surface-mount package
额定电压DC 20.0 V
额定电流 700 mA
针脚数 6
漏源极电阻 0.3 Ω
极性 Dual N-Channel
耗散功率 300 mW
阈值电压 1.2 V
输入电容 66.5 pF
栅电荷 760 pC
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 700 mA
上升时间 7 ns
输入电容Ciss 66.5pF @10VVds
额定功率Max 300 mW
下降时间 2.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.3 W
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDG6317NZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
PMGD280UN,115 恩智浦 | 功能相似 | FDG6317NZ和PMGD280UN,115的区别 |
SI1902DL-T1-E3 威世 | 功能相似 | FDG6317NZ和SI1902DL-T1-E3的区别 |