FDN335N

FAIRCHILD SEMICONDUCTOR  FDN335N  晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 1.7A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.070Ω/Ohm @17.7A,4.5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.4-1.5V 耗散功率Pd Power Dissipation| 500mW/0.5W Description & Applications| N-Channel 2.5V Specified PowerTrench TM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • 1.7 A, 20 V. RDSON = 0.07 Ω @ VGS = 4.5 V RDSON = 0.100 Ω @ VGS = 2.5 V. • Low gate charge 3.5nC typical. • High performance trench technology for extremelyow RDSON High power and current handling capability. 描述与应用| N沟道2.5V指定的PowerTrench TM MOSFET 概述 这N沟道2.5V指定的MOSFET的生产 采用飞兆半导体先进的PowerTrench 过程中，已特别针对减少通态电阻，但维持低栅极电荷 优越的开关性能。 •低栅极电荷（3.5nC典型值）。 •高性能沟道技术为extremelyow RD（ON） 高功率和电流处理力