FAIRCHILD SEMICONDUCTOR FDN357N 晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V
The is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using "s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount-package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
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- High density cell design for extremely low RDS ON
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- Exceptional ON-resistance and maximum DC current capability
额定电压DC 30.0 V
额定电流 1.90 A
针脚数 3
漏源极电阻 0.053 Ω
极性 N-Channel
耗散功率 500 mW
阈值电压 1.6 V
输入电容 235 pF
栅电荷 4.20 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 1.90 A
上升时间 12 ns
输入电容Ciss 235pF @10VVds
额定功率Max 460 mW
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.5 W
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.92 mm
宽度 1.4 mm
高度 0.94 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDN357N Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRLML0030TRPBF 英飞凌 | 功能相似 | FDN357N和IRLML0030TRPBF的区别 |
BSH108,215 恩智浦 | 功能相似 | FDN357N和BSH108,215的区别 |