FAIRCHILD SEMICONDUCTOR FDG6332C_F085 双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
The is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
- .
- Low gate charge
- .
- High performance Trench technology for extremely low RDS ON
- .
- Small footprint
- .
- Low profile
针脚数 6
漏源极电阻 0.18 Ω
极性 N-Channel, P-Channel
耗散功率 300 mW
阈值电压 1.1 V
漏源极电压Vds 20 V
连续漏极电流Ids 0.7A/0.6A
输入电容Ciss 113pF @10VVds
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.3 W
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDG6332C_F085 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDG6332C 飞兆/仙童 | 类似代替 | FDG6332C_F085和FDG6332C的区别 |
AO7600 万代半导体 | 功能相似 | FDG6332C_F085和AO7600的区别 |