FAIRCHILD SEMICONDUCTOR FDG6320C 双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
The is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
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- Very small package outline
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- Very low level gate drive requirements allowing direct operation in 3V circuits VGS th <1.5V
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- Gate-source Zener for ESD ruggedness
额定电流 220 mA
针脚数 6
漏源极电阻 4 Ω
极性 N-Channel, P-Channel
耗散功率 300 mW
阈值电压 850 mV
输入电容 12.0 pF
栅电荷 220 pC
漏源极电压Vds 25 V
漏源击穿电压 25.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 220 mA
上升时间 8.00 ns
输入电容Ciss 9.5pF @10VVds
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.3 W
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDG6320C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDG6322C 飞兆/仙童 | 类似代替 | FDG6320C和FDG6322C的区别 |
FDG6322C_NL 飞兆/仙童 | 功能相似 | FDG6320C和FDG6322C_NL的区别 |
FDG6320C_NL 飞兆/仙童 | 功能相似 | FDG6320C和FDG6320C_NL的区别 |