FAIRCHILD SEMICONDUCTOR FDC608PZ 晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
The is a 2.5V specified P-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery power circuits and DC-to-DC conversion applications.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
额定电压DC -20.0 V
额定电流 -5.80 A
针脚数 6
漏源极电阻 0.026 Ω
极性 P-Channel
耗散功率 1.6 W
输入电容 1.33 nF
栅电荷 23.0 nC
漏源极电压Vds 20 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 5.80 A
上升时间 8 ns
输入电容Ciss 1330pF @10VVds
额定功率Max 800 mW
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC608PZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |