FAIRCHILD SEMICONDUCTOR FDC6327C 双路场效应管, MOSFET, N和P沟道, 1.9 A, 20 V, 0.069 ohm, 4.5 V, 900 mV
The is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and DC-to-DC converter applications.
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- Low gate charge
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- Small footprint
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- Low profile
额定电流 2.70 A
针脚数 6
漏源极电阻 0.069 Ω
极性 N-Channel, P-Channel, Dual N-Channel, Dual P-Channel
耗散功率 960 mW
阈值电压 900 mV
输入电容 315 pF
栅电荷 2.85 nC
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 2.70 A, 1.90 A
上升时间 14.0 ns
输入电容Ciss 325pF @10VVds
额定功率Max 700 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.96 W
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC6327C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC6333C 飞兆/仙童 | 类似代替 | FDC6327C和FDC6333C的区别 |
SI3588DV-T1-E3 Vishay Siliconix | 功能相似 | FDC6327C和SI3588DV-T1-E3的区别 |
SI3586DV-T1-GE3 Vishay Siliconix | 功能相似 | FDC6327C和SI3586DV-T1-GE3的区别 |