FAIRCHILD SEMICONDUCTOR FQN1N60CTA 功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 9.3 ohm, 10 V, 4 V
The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge 4.8nC
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- Low Crss 3.5pF
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- 100% avalanche tested
针脚数 3
漏源极电阻 9.3 Ω
极性 N-Channel
耗散功率 1 W
阈值电压 4 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 300 mA
上升时间 21 ns
输入电容Ciss 170pF @25VVds
额定功率Max 1 W
下降时间 27 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1 W
安装方式 Through Hole
引脚数 3
封装 TO-226-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-226-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Box TB
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQN1N60CTA Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |