FAIRCHILD SEMICONDUCTOR FQN1N50CTA 晶体管, MOSFET, N沟道, 380 mA, 500 V, 4.6 ohm, 10 V, 4 V
The is a N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
- .
- 100% Avalanche tested
- .
- 4.9nC Typical low gate charge
- .
- 4.1pF Typical low Crss
通道数 1
针脚数 3
漏源极电阻 4.6 Ω
极性 N-Channel
耗散功率 890 mW
阈值电压 4 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 380 mA
上升时间 10 ns
输入电容Ciss 195pF @25VVds
额定功率Max 890 mW
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 890mW Ta, 2.08W Tc
安装方式 Through Hole
引脚数 3
封装 TO-92-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-92-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Ammo Pack
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99