FAIRCHILD SEMICONDUCTOR FDG327NZ 晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
The is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS ON and gate charge QG in a small package.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- Low gate charge
额定电压DC 20.0 V
额定电流 1.50 A
针脚数 6
漏源极电阻 0.068 Ω
极性 N-Channel
耗散功率 420 mW
阈值电压 700 mV
输入电容 412 pF
栅电荷 4.20 nC
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 1.50 A
上升时间 12 ns
输入电容Ciss 412pF @10VVds
额定功率Max 380 mW
下降时间 18 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 420mW Ta
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDG327NZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDG315N 飞兆/仙童 | 类似代替 | FDG327NZ和FDG315N的区别 |
FDG311N 飞兆/仙童 | 类似代替 | FDG327NZ和FDG311N的区别 |
FDG327N 飞兆/仙童 | 类似代替 | FDG327NZ和FDG327N的区别 |