N沟道逻辑电平MOSFET PowerTrenchTM N-Channel Logic Level PowerTrenchTM MOSFET
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDSON specifications.
The result is a MOSFET that is easy and safer to drive even at very high frequencies, and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDSON and fast switching speed.
Product Highlights
80 A, 30 V.
R
DSON
= 6.5 m
W
@ V
GS
=10 V
R
DSON
= 8.5 m
W
@ V
GS
= 4.5 V
额定电压DC 30.0 V
漏源极电阻 5.20 mΩ
极性 N-Channel
耗散功率 68 W
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 80.0 A
上升时间 13 ns
输入电容Ciss 2440pF @15VVds
额定功率Max 68 W
下降时间 15 ns
工作温度Max 175 ℃
工作温度Min -65 ℃
耗散功率Max 68W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
高度 4.83 mm
封装 TO-263-3
工作温度 -65℃ ~ 175℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDB6670AL Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDB8896 飞兆/仙童 | 类似代替 | FDB6670AL和FDB8896的区别 |
STB80NF03L-04T4 意法半导体 | 功能相似 | FDB6670AL和STB80NF03L-04T4的区别 |
STB95N3LLH6 意法半导体 | 功能相似 | FDB6670AL和STB95N3LLH6的区别 |