FAIRCHILD SEMICONDUCTOR FDC6321C 双路场效应管, MOSFET, N和P沟道, 460 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
The is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
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- Very low level gate drive requirements allowing direct operation in 3V circuits
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- Gate-source Zener for ESD ruggedness
额定电流 680 mA
针脚数 6
漏源极电阻 0.33 Ω
极性 N-Channel, P-Channel
耗散功率 900 mW
阈值电压 800 mV
输入电容 63.0 pF
栅电荷 1.10 nC
漏源极电压Vds 25 V
漏源击穿电压 ±25.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 680 mA, 460 mA
上升时间 9.00 ns
输入电容Ciss 50pF @10VVds
额定功率Max 700 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.9 W
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC6321C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC6333C 飞兆/仙童 | 类似代替 | FDC6321C和FDC6333C的区别 |
SI3588DV-T1-E3 Vishay Siliconix | 功能相似 | FDC6321C和SI3588DV-T1-E3的区别 |
SI3586DV-T1-GE3 Vishay Siliconix | 功能相似 | FDC6321C和SI3586DV-T1-GE3的区别 |