FDG1024NZ

FAIRCHILD SEMICONDUCTOR  FDG1024NZ  双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV

The is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

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Very low level gate drive requirements allowing operation in 1.5V circuits VGS th <1V

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Very small package outline

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±8V Gate to source voltage

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1.2A Continuous drain current

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6A Pulsed drain current