FQPF33N10

100V N沟道MOSFET 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Product Highlights

18A, 100V, R

DSon

= 0.052

W

@V

GS

= 10 V

Low gate charge typical 38 nC

Low Crss typical 62 pF

Fast switching

100% avalanche tested

Improved dv/dt capability

175°Cmaximum junction temperature rating