FDG6313N 复合场效应管 25V 500mA/0.5A SOT-363/SC70-6 marking/标记 33h
最大源漏极电压VdsDrain-Source Voltage| 25V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| 500mA/0.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.6Ω@ VGS = 2.7V, ID =200mA 开启电压Vgs(th)Gate-Source Threshold Voltage| 0.65~1.5V 耗散功率PdPower Dissipation| 300mW/0.3W Description & Applications| P-Channel 2.5V Specified Power Trench MOSFET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using "s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features Very low level gate drive requirements allowing direct operation in 3 V circuits Compact industry standard SC70-6 surface mount package. 描述与应用| P沟道2.5V额定功率沟道MOSFET 概述 这些双N沟道逻辑电平增强模式场效应都采用飞兆半导体专有的,高细胞密度,DMOS技术生产。这非常高密度的过程特别是针对减少通态电阻。该器件设计,尤其是作为一个替代双极数字晶体管和小信号MOSFET的低电压应用。 特点 非常低的水平栅极驱动要求可直接操作3 V电路 紧凑型工业标准SC70-6表面贴装封装。
额定电压DC 25.0 V
额定电流 500 mA
漏源极电阻 340 mΩ
极性 N-Channel
耗散功率 300 mW
输入电容 50.0 pF
栅电荷 1.64 nC
漏源极电压Vds 25 V
漏源击穿电压 25.0 V
栅源击穿电压 8.00 V
连续漏极电流Ids 500 mA
上升时间 8.50 ns
输入电容Ciss 50pF @10VVds
额定功率Max 300 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDG6313N Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDG6303N 飞兆/仙童 | 类似代替 | FDG6313N和FDG6303N的区别 |
FDC6303N 飞兆/仙童 | 类似代替 | FDG6313N和FDC6303N的区别 |
FDG6313N_NL 飞兆/仙童 | 类似代替 | FDG6313N和FDG6313N_NL的区别 |