FAIRCHILD SEMICONDUCTOR FQD7N10LTM 晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 4.6nC Typical low gate charge
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- 12pF Typical low Crss
额定电压DC 100 V
额定电流 5.80 A
通道数 1
针脚数 3
漏源极电阻 0.275 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 2 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 5.80 A
上升时间 100 ns
输入电容Ciss 290pF @25VVds
额定功率Max 2.5 W
下降时间 50 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.1 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD7N10LTM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD7N10LTF 飞兆/仙童 | 类似代替 | FQD7N10LTM和FQD7N10LTF的区别 |
STD6NF10T4 意法半导体 | 功能相似 | FQD7N10LTM和STD6NF10T4的区别 |
BUK7275-100A,118 恩智浦 | 功能相似 | FQD7N10LTM和BUK7275-100A,118的区别 |