FAIRCHILD SEMICONDUCTOR FQPF19N20 晶体管, MOSFET, N沟道, 11.8 A, 200 V, 150 mohm, 10 V, 5 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 31nC Typical low gate charge
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- 30pF Typical low Crss
额定电压DC 200 V
额定电流 19.4 A
通道数 1
针脚数 3
漏源极电阻 150 mΩ
极性 N-Channel
耗散功率 50 W
阈值电压 5 V
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 11.8 A
上升时间 190 ns
输入电容Ciss 1600pF @25VVds
额定功率Max 50 W
下降时间 80 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 50W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF19N20 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
RFP12N10L 飞兆/仙童 | 类似代替 | FQPF19N20和RFP12N10L的区别 |
STW20NK50Z 意法半导体 | 功能相似 | FQPF19N20和STW20NK50Z的区别 |
STF20NF20 意法半导体 | 功能相似 | FQPF19N20和STF20NF20的区别 |