FAIRCHILD SEMICONDUCTOR FQD13N10TM 晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
Description
This N-Channel enhancement mode power MOSFET is produced using Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 10 A, 100 V, RDSon = 180 mΩ Max @VGS = 10V, ID = 5.0 A
• Low Gate Charge Typ. 12 nC
• Low Crss Typ. 20 pF
• 100% Avalanche Tested
额定电压DC 100 V
额定电流 10.0 A
通道数 1
针脚数 3
漏源极电阻 0.142 Ω
极性 N-Channel
耗散功率 40 W
阈值电压 4 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 10.0 A
上升时间 55 ns
输入电容Ciss 450pF @25VVds
额定功率Max 2.5 W
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 40W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.1 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD13N10TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STD10NF10T4 意法半导体 | 功能相似 | FQD13N10TM和STD10NF10T4的区别 |