FAIRCHILD SEMICONDUCTOR FQD11P06TM 晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V 新
General Description
These P-Channel enhancement mode power field effect transistors are produced using ís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
-9.4A, -60V, RDSon= 0.185Ω@VGS= -10 V
Low gate charge typical 13 nC
Low Crss typical 45 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
额定电压DC -60.0 V
额定电流 -9.40 A
针脚数 3
漏源极电阻 0.15 Ω
极性 P-Channel
耗散功率 2.5 W
漏源极电压Vds 60 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 9.40 A
上升时间 40 ns
输入电容Ciss 550pF @25VVds
额定功率Max 2.5 W
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.1 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD11P06TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD11P06TF 飞兆/仙童 | 类似代替 | FQD11P06TM和FQD11P06TF的区别 |
STD10PF06T4 意法半导体 | 功能相似 | FQD11P06TM和STD10PF06T4的区别 |
FQD11P06 飞兆/仙童 | 功能相似 | FQD11P06TM和FQD11P06的区别 |