FDS8812NZ

N沟道PowerTrench MOSFET的30V ， 20A ， 4.0mohm N-Channel PowerTrench MOSFET 30V, 20A, 4.0mohm

General Description

This N-Channel MOSFET isproduced using Semiconductor’s advanced PowerTrench® process that has

been especially tailored to minimize the on-state resistance.

Features

„Max rDSon =4.0mΩat VGS = 10V, ID= 20A

„Max rDSon =4.9mΩat VGS = 4.5V, ID=18A

„HBM ESD protection level of 6.4kV typical note 3

„High performance trench technology for extremely low rDSon

„High power and current handling capability

„RoHS compliant