FDMS8880

N沟道MOSFET PowerTrench㈢ 30 V ， 21 A， 8.5米ヘ N-Channel PowerTrench㈢ MOSFET 30 V, 21 A, 8.5 mヘ

* Max rDSon = 8.5 mΩ at VGS = 10 V, ID = 13.5 A * Max rDSon = 13.0 mΩ at VGS = 4.5 V, ID = 10.9 A * Advanced Package and Silicon combination for low rDSon and high efficiency * MSL1 robust package design * RoHS Compliant

得捷:
MOSFET N-CH 30V 13.5A/21A 8PQFN

艾睿:
Trans MOSFET N-CH 30V 13.5A 8-Pin Power 56 EP T/R

安富利:
Trans MOSFET N-CH 30V 13.5A 8-Pin Power 56 T/R

Verical:
Trans MOSFET N-CH Si 30V 13.5A 8-Pin Power 56 EP T/R

Win Source:
MOSFET N-CH 30V 13.5A POWER56