FAIRCHILD SEMICONDUCTOR FDC6318P 双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV
The is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
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- High performance Trench technology for extremely low RDS ON
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- Small footprint
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- Low profile
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- ±8V Gate to source voltage
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- -2.5A Continuous drain/output current
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- -7A Pulsed drain/output current
额定电压DC -12.0 V
额定电流 -2.50 A
针脚数 6
漏源极电阻 90 mΩ
极性 P-Channel, Dual P-Channel
耗散功率 960 mW
阈值电压 700 mV
输入电容 455 pF
栅电荷 5.40 nC
漏源极电压Vds 12 V
连续漏极电流Ids -2.50 A
上升时间 14 ns
输入电容Ciss 455pF @6VVds
额定功率Max 700 mW
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.96 W
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC6318P Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC6306P 飞兆/仙童 | 类似代替 | FDC6318P和FDC6306P的区别 |
ZXM62P03E6TC 美台 | 功能相似 | FDC6318P和ZXM62P03E6TC的区别 |
FDC6306P_NL 飞兆/仙童 | 功能相似 | FDC6318P和FDC6306P_NL的区别 |