FAIRCHILD SEMICONDUCTOR FQD8P10TM 晶体管, MOSFET, P沟道, -6.6 A, -100 V, 0.41 ohm, -10 V, -4 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- .
- 100% Avalanche tested
- .
- 12nC Typical low gate charge
- .
- 30pF Typical low Crss
额定电压DC -100 V
额定电流 -6.60 A
通道数 1
针脚数 3
漏源极电阻 0.41 Ω
极性 P-Channel
耗散功率 44 W
漏源极电压Vds 100 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.60 A
上升时间 110 ns
输入电容Ciss 470pF @25VVds
额定功率Max 2.5 W
下降时间 35 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 44W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.1 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD8P10TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD8P10TF 飞兆/仙童 | 类似代替 | FQD8P10TM和FQD8P10TF的区别 |
FQD8P10TM_SB82052 飞兆/仙童 | 类似代替 | FQD8P10TM和FQD8P10TM_SB82052的区别 |
IRFR9120TRPBF 威世 | 功能相似 | FQD8P10TM和IRFR9120TRPBF的区别 |