FAIRCHILD SEMICONDUCTOR FDMA530PZ. 场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
The is a single P-channel MOSFET produced Semiconductor"s PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultra-portable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
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- Halogen-free
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- >3kV Typical HBM ESD protection level
额定电压DC -30.0 V
额定电流 -6.80 A
针脚数 6
漏源极电阻 0.03 Ω
极性 P-Channel
耗散功率 2.4 W
输入电容 1.07 nF
栅电荷 24.0 nC
漏源极电压Vds 30 V
连续漏极电流Ids 6.80 A
上升时间 21 ns
输入电容Ciss 1070pF @15VVds
额定功率Max 900 mW
下降时间 31 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.4W Ta
安装方式 Surface Mount
引脚数 6
封装 MicroFET-6
长度 2 mm
宽度 2 mm
高度 0.75 mm
封装 MicroFET-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDMA530PZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRFHS9301TRPBF 英飞凌 | 功能相似 | FDMA530PZ和IRFHS9301TRPBF的区别 |