FAIRCHILD SEMICONDUCTOR FDMA1023PZ 双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 60 mohm, -4.5 V, -700 mV
The is a PowerTrench® dual P-channel MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
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- Low profile
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- Halogen-free
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- ±8V Gate to source voltage
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- -3.7A Continuous drain current
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- -6A Pulsed drain current
针脚数 6
漏源极电阻 60 mΩ
极性 P-Channel
耗散功率 1.5 W
漏源极电压Vds 20 V
连续漏极电流Ids -3.70 A
上升时间 12 ns
输入电容Ciss 655pF @10VVds
额定功率Max 700 mW
下降时间 37 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.5 W
安装方式 Surface Mount
引脚数 6
封装 WDFN-6
长度 2 mm
宽度 2 mm
高度 0.75 mm
封装 WDFN-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDMA1023PZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDMA1027PT 飞兆/仙童 | 类似代替 | FDMA1023PZ和FDMA1027PT的区别 |
PMDPB65UP,115 恩智浦 | 功能相似 | FDMA1023PZ和PMDPB65UP,115的区别 |