FAIRCHILD SEMICONDUCTOR FQP13N10L 晶体管, MOSFET, N沟道, 12.8 A, 100 V, 0.142 ohm, 10 V, 2 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 8.7nC Typical low gate charge
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- 100pF Typical low Crss
额定电压DC 100 V
额定电流 12.8 A
针脚数 3
漏源极电阻 0.142 Ω
极性 N-Channel
耗散功率 65 W
阈值电压 2 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 12.8 A
输入电容Ciss 520pF @25VVds
额定功率Max 65 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 65W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP13N10L Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP14NF10 意法半导体 | 功能相似 | FQP13N10L和STP14NF10的区别 |
PSMN009-100P,127 恩智浦 | 功能相似 | FQP13N10L和PSMN009-100P,127的区别 |
PSMN5R6-100PS,127 恩智浦 | 功能相似 | FQP13N10L和PSMN5R6-100PS,127的区别 |