FAIRCHILD SEMICONDUCTOR FQU17P06TU 晶体管, MOSFET, P沟道, 12 A, -60 V, 0.11 ohm, -10 V, -4 V
The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
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- Low gate charge
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- 100% Avalanche tested
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- Low crss typical 80pF
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- ±25V Gate-source voltage
电源电压DC 37.0V max
额定电压DC -60.0 V
额定电流 -12.0 A
通道数 1
针脚数 3
漏源极电阻 135 mΩ
极性 P-Channel
耗散功率 44 W
输入电容 690 pF
栅电荷 21.0 nC
漏源极电压Vds 60 V
漏源击穿电压 60 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids -12.0 A
上升时间 100 ns
输入电容Ciss 900pF @25VVds
额定功率Max 2.5 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.8 mm
宽度 2.5 mm
高度 6.1 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQU17P06TU Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRFI9Z34GPBF 威世 | 功能相似 | FQU17P06TU和IRFI9Z34GPBF的区别 |
STD10PF06-1 意法半导体 | 功能相似 | FQU17P06TU和STD10PF06-1的区别 |
FQU11P06 飞兆/仙童 | 功能相似 | FQU17P06TU和FQU11P06的区别 |