FDMS0308AS

Trans MOSFET N-CH 30V 24A 8Pin Power 56 T/R

* Max rDSon = 2.8 mΩ at VGS = 10 V, ID = 24 A * Max rDSon = 3.5 mΩ at VGS = 4.5 V, ID = 21 A * Advanced package and silicon combination for low rDSon and high efficiency * SyncFET Schottky Body Diode * MSL1 robust package design * 100% UIL tested * RoHS Compliant

得捷:
POWER FIELD-EFFECT TRANSISTOR, 2

艾睿:
Trans MOSFET N-CH 30V 24A

安富利:
Trans MOSFET N-CH 30V 24A 8-Pin Power 56 T/R

Win Source:
MOSFET N-CH 30V 24A PT8