FAIRCHILD SEMICONDUCTOR FDME1024NZT 双路场效应管, MOSFET, 双N沟道, 3.8 A, 20 V, 0.055 ohm, 4.5 V, 700 mV
The is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
- .
- Low profile
- .
- Halogen-free
- .
- ±8V Gate to source voltage
- .
- 3.8A Continuous drain current
- .
- 6A Pulsed drain current
通道数 2
针脚数 6
漏源极电阻 0.055 Ω
极性 Dual N-Channel
耗散功率 1.4 W
阈值电压 700 mV
漏源极电压Vds 20 V
漏源击穿电压 20 V
连续漏极电流Ids 3.8A
上升时间 2 ns
输入电容Ciss 225pF @10VVds
额定功率Max 600 mW
下降时间 1.7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1400 mW
安装方式 Surface Mount
引脚数 6
封装 MicroFET-6
长度 1.6 mm
宽度 1.6 mm
高度 0.5 mm
封装 MicroFET-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDME1024NZT Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDMA1028NZ 飞兆/仙童 | 功能相似 | FDME1024NZT和FDMA1028NZ的区别 |