FAIRCHILD SEMICONDUCTOR FDS6961A.. 双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 90 mohm, 10 V, 1.8 V
General Description
These N-Channel Logic Level MOSFETs are produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching
performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
3.5 A, 30 V. RDSON = 0.090 W @ VGS = 10 V
RDSON = 0.140 W @ VGS = 4.5 V.
Fast switching speed.
Low gate charge 2.1nC typical.
High performance trench technology for extremely low RDSON.
High power and current handling capability.
额定电压DC 30.0 V
额定电流 3.50 A
针脚数 8
漏源极电阻 0.09 Ω
极性 Dual N-Channel
耗散功率 2 W
阈值电压 1.8 V
输入电容 220 pF
栅电荷 2.10 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 3.50 A
上升时间 11 ns
输入电容Ciss 220pF @15VVds
额定功率Max 900 mW
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6961A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
PHN210T,118 恩智浦 | 功能相似 | FDS6961A和PHN210T,118的区别 |
IRF7303PBF 国际整流器 | 功能相似 | FDS6961A和IRF7303PBF的区别 |
SP8K5FU6TB 罗姆半导体 | 功能相似 | FDS6961A和SP8K5FU6TB的区别 |