FAIRCHILD SEMICONDUCTOR FDS6930B. 场效应管, MOSFET, N沟道, 30V
The is a dual N-channel Logic Level MOSFET produced using Semiconductor"s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
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- Low gate charge
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- High performance trench technology for extremely low RDS ON
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- High power and current handling capability
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- -55 to 150°C Junction and storage temperature range
额定电压DC 30.0 V
额定电流 5.50 A
针脚数 8
漏源极电阻 0.031 Ω
极性 Dual N-Channel
耗散功率 2 W
阈值电压 1.9 V
输入电容 412 pF
栅电荷 3.80 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 5.50 A
上升时间 6 ns
输入电容Ciss 412pF @15VVds
额定功率Max 900 mW
下降时间 2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6930B Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC655BN 飞兆/仙童 | 功能相似 | FDS6930B和FDC655BN的区别 |
MMDF3N04HDR2G 安森美 | 功能相似 | FDS6930B和MMDF3N04HDR2G的区别 |