FAIRCHILD SEMICONDUCTOR FDS9934C 双路场效应管, MOSFET, N和P沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
The is a dual N/P-channel enhancement-mode Power FET produced using advanced PowerTrench process. It is especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
得捷:
POWER FIELD-EFFECT TRANSISTOR, 6
立创商城:
1个N沟道和1个P沟道 20V 5A 6.5A
贸泽:
MOSFET 20V Complementary PowerTrench
艾睿:
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R
安富利:
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R
富昌:
FDS9934C 系列 20 V 30 mOhm 双 N和P沟道 PowerTrench® MOSFET - SOIC-8
TME:
Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.5/5A; 2W; SO8
Verical:
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R
Newark:
# FAIRCHILD SEMICONDUCTOR FDS9934C Dual MOSFET, N and P Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
Win Source:
MOSFET N/P-CH 20V 6.5A/5A 8SOIC
DeviceMart:
MOSFET N/P-CH DUAL 20V 8SOIC
额定电流 6.50 A
针脚数 8
漏源极电阻 0.025 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 1 V
输入电容 955 pF
栅电荷 8.70 nC
漏源极电压Vds 20 V
漏源击穿电压 ±20.0 V
栅源击穿电压 ±10.0 V
连续漏极电流Ids 6.50 A
上升时间 9.00 ns
输入电容Ciss 650pF @10VVds
额定功率Max 900 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDS9934C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
NDS8928 飞兆/仙童 | 类似代替 | FDS9934C和NDS8928的区别 |
IRF7307PBF 英飞凌 | 功能相似 | FDS9934C和IRF7307PBF的区别 |