FAIRCHILD SEMICONDUCTOR FQPF20N06L 晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 9.5nC Typical low gate charge
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- 35pF Typical low Crss
额定电压DC 60.0 V
额定电流 15.7 A
针脚数 3
漏源极电阻 0.042 Ω
极性 N-Channel
耗散功率 30 W
阈值电压 1 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 15.7 A
上升时间 156 ns
输入电容Ciss 630pF @25VVds
额定功率Max 30 W
下降时间 70 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 30 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Motor Drive & Control, Audio
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99