FAIRCHILD SEMICONDUCTOR FDS6690AS 晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
The is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. It includes an integrated Schottky diode using "s monolithic SyncFET technology. The performance is as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- 16nC Typical low gate charge
额定电压DC 30.0 V
额定电流 10.0 A
针脚数 8
漏源极电阻 0.01 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 1.6 V
输入电容 910 pF
栅电荷 16.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 10.0 A
上升时间 5 ns
输入电容Ciss 910pF @15VVds
额定功率Max 1 W
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6690AS Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS4410 飞兆/仙童 | 类似代替 | FDS6690AS和FDS4410的区别 |
IRF8707TRPBF 英飞凌 | 功能相似 | FDS6690AS和IRF8707TRPBF的区别 |
IRF8707GTRPBF 英飞凌 | 功能相似 | FDS6690AS和IRF8707GTRPBF的区别 |