FAIRCHILD SEMICONDUCTOR FDD8451 晶体管, MOSFET, N沟道, 28 A, 40 V, 19 mohm, 10 V, 2.1 V
The is a N-channel MOSFET produced using Semiconductor"s proprietary PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low RDS ON.
- .
- Low gate charge
- .
- High performance Trench technology for extremely low RDS ON
- .
- Fast switching
通道数 1
针脚数 3
漏源极电阻 19 mΩ
极性 N-Channel
耗散功率 30 W
阈值电压 2.1 V
漏源极电压Vds 40 V
漏源击穿电压 40 V
连续漏极电流Ids 28.0 A
上升时间 3 ns
输入电容Ciss 990pF @20VVds
额定功率Max 30 W
下降时间 2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 30W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD8451 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
BUK6218-40C,118 恩智浦 | 功能相似 | FDD8451和BUK6218-40C,118的区别 |