FDS8858CZ

FAIRCHILD SEMICONDUCTOR  FDS8858CZ  双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V

The is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM figure of merit QGxRDSON of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.

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High performance trench technology for extremely low RDS on

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High power and current handling capability