FDS6990AS

FAIRCHILD SEMICONDUCTOR  FDS6990AS  双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V

The is a dual N-channel MOSFET designed to replace a dual MOSFET and two Schottky diodes in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. Each MOSFET includes integrated Schottky diodes using "s monolithic SyncFET technology. The performance of the transistor as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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±20V Gate to source voltage

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7.5A Continuous drain current

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20A Pulsed drain current