FAIRCHILD SEMICONDUCTOR FQP8P10. 晶体管, MOSFET, P沟道, 8 A, -100 V, 410 mohm, -10 V, -4 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 12nC Typical low gate charge
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- 30pF Typical low Crss
额定电压DC -100 V
额定电流 -8.00 A
针脚数 3
漏源极电阻 0.41 Ω
极性 P-Channel
耗散功率 65 W
漏源极电压Vds 100 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 8.00 A
上升时间 110 ns
输入电容Ciss 470pF @25VVds
额定功率Max 65 W
下降时间 35 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 65W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Motor Drive & Control, Audio
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP8P10 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 功能相似 | FQP8P10和STP55NF06的区别 |
STP5NK100Z 意法半导体 | 功能相似 | FQP8P10和STP5NK100Z的区别 |
STP80NF10 意法半导体 | 功能相似 | FQP8P10和STP80NF10的区别 |