FAIRCHILD SEMICONDUCTOR FDMC2523P 晶体管, MOSFET, P沟道, 3 A, -150 V, 1.5 ohm, 10 V, 3.8 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using "s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is well suited for low voltage applications such as audio amplifier and high efficiency switching DC-to-DC converters.
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- Fast switching
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- Improved dV/dt capability
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- 6.2nC Typical low gate charge
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- 10pF Typical low Crss
额定电压DC -150 V
额定电流 -3.00 A
针脚数 8
漏源极电阻 1.5 Ω
极性 P-Channel
耗散功率 42 W
阈值电压 3.8 V
输入电容 270 pF
栅电荷 9.00 nC
漏源极电压Vds 150 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 3.00 A
上升时间 11 ns
输入电容Ciss 270pF @25VVds
额定功率Max 42 W
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 42W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerWDFN-8
长度 3 mm
宽度 3 mm
高度 0.95 mm
封装 PowerWDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
