FAIRCHILD SEMICONDUCTOR FQD9N25TM 晶体管, MOSFET, N沟道, 7.4 A, 250 V, 0.33 ohm, 10 V, 5 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 15.5nC Typical low gate charge
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- 15pF Typical low Crss
额定电压DC 250 V
额定电流 7.40 A
通道数 1
针脚数 3
漏源极电阻 0.33 Ω
极性 N-Channel
耗散功率 55 W
阈值电压 5 V
漏源极电压Vds 250 V
漏源击穿电压 250 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 7.40 A
上升时间 105 ns
输入电容Ciss 700pF @25VVds
额定功率Max 2.5 W
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 55W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD9N25TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD9N25TM_F080 飞兆/仙童 | 类似代替 | FQD9N25TM和FQD9N25TM_F080的区别 |
FQD9N25TF 飞兆/仙童 | 类似代替 | FQD9N25TM和FQD9N25TF的区别 |